The barrier potential of silicon diode at room temperature is
Question and options
The barrier potential of silicon diode at room temperature is
- 0.3 volt
- 0.7 volt
- 1 volt
- 2 volt
Answer and explanation
Correct answer: B - 0.7 volt
The barrier (cut-in) potential of a silicon p-n junction at room temperature is about 0.7 V. The figure of 0.3 V belongs to germanium, which has a smaller band gap, while 1 V and 2 V are too high for an ordinary silicon diode.
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